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hys72t[64/128]3x0hp?3s?a hys72t[64/128]3x0hp?3.7?a 240-pin registered ddr2 sdram modules ddr2 sdram rdimm sdram rohs compliant data sheet, rev. 1.11, dec. 2005 memory products
edition 2005-12 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2005. all rights reserved. attention please! the information herein is given to describe certain co mponents and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
template: mp_a4_s_rev321 / 3 / 2005-10-05 hys72t[64/128]3x0hp?3s?a , hys72t[64/128]3x0hp?3.7?a revision history: 2005-12 , rev. 1.11 page subjects (major cha nges since last revision) removed ?preliminary? from data sheet. previous version: 2005-12 rev. 1.1 all product portfolio changed - hr products replaced by hp (parity) chapter 2 pin configuration updated for parity chapter 4 spd codes updated chapter 5 replaced package outline l-dim 240-52 previous version: 2005-06 rev. 1.0 initial revision spd code rev. 1.2 we listen to your comments any information within this do cument that you feel is wrong, unclear or missing at all? your feedback will help us to continuous ly improve the qualit y of this document. please send us your proposal (including a reference to this document) to: techdoc.mp@infineon.com
data sheet 4 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules table of contents 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 pin configuration and block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.2 dc operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.3 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.3.1 speed grades definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.3.2 ac timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.3.3 odt ac electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 3.4 currents specifications and conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 3.4.1 i dd test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 3.4.2 on die termination (odt) cu rrent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 4 spd codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 5 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 6 product type nomenclature (ddr2 drams and dimms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 table of contents
data sheet 5 rev. 1.11, 2005-12 04212005-mf7v-dno1 240-pin registered ddr2 sdram modules ddr2 sdram hys72t[64/128]3x0hp?3s?a hys72t[64/128]3x0hp?3.7?a 1overview this chapter gives an overview of the 240-pin regi stered ddr2 sdram modules product family and describes its main characteristics. 1.1 features ? 240-pin pc2-5300 and pc2-4200 ddr2 sdram memory modules for pc, workstation and server main memory applications ? one rank 64m x 72, 128m x 72 and two ranks 64m x 72, 128m 72 module organization and 64m 8, 128m 4 chip organization ? 512 mbyte and 1gbyte module built with 512-mbit ddr2 sdrams in p-tfbga-60 chipsize packages. ? standard double-data-rate-two synchronous drams (ddr2 sdram) with a single + 1.8 v ( 0.1 v) power supply ? all speed grades faster than ddr2-400 comply with ddr2-400 timing specifications as well. ? vlp (very low profile) re gistered dimm parity bit for address and control bus ? programmable cas latencies (3, 4 & 5), burst length (4 & 8) and burst type ? auto refresh (cbr) and self refresh ? all inputs and outputs sstl_18 compatible ? off-chip driver impedance adjustment (ocd) and on-die termination (odt) ? serial presence detect with e 2 prom ? based on standard reference layouts raw card ?r?, ?t? and ?u? ? rdimm with parity dimensions (nominal): 17.80 mm high, 133.35 mm wide ? rohs compliant products 1) 1) rohs compliant product: restriction of the use of certain hazardous substances (rohs) in electrical and electronic equipment as defined in the directive 2 002/95/ec issued by the european parliament and of the council of 27 january 2003. these substances include mercury, lead, cadmiu m, hexavalent chromium, po lybrominated biphenyls and polybrominated biphenyl ethers. table 1 performanc e for ddr2?667 product type speed code ?3s unit speed grade pc2?5300 5?5?5 ? max. clock frequency @cl5 f ck5 333 mhz @cl4 f ck4 266 mhz @cl3 f ck3 200 mhz min. ras-cas-delay t rcd 15 ns min. row precharge time t rp 15 ns min. row active time t ras 45 ns min. row cycle time t rc 60 ns
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules overview data sheet 6 rev. 1.11, 2005-12 04212005-mf7v-dno1 table 2 performanc e for ddr2-533 product type speed code ?3.7 units speed grade pc2?4200 4?4?4 ? max. clock frequency @cl5 f ck5 266 mhz @cl4 f ck4 266 mhz @cl3 f ck3 200 mhz min. ras-cas-delay t rcd 15 ns min. row precharge time t rp 15 ns min. row active time t ras 45 ns min. row cycle time t rc 60 ns
data sheet 7 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules overview 1.2 description the infineon hys72t[64/128]3x0hp?[3s/3.7]?a module family are very low profile (vlp) registered dimm (rdimm with parity) with 17.80 mm height based on ddr2 technology. dimms are available as ecc modules in 64m x 72 (512 mbyte) and 128m x 72 (1 gbyte) organizati on and density, intended for mounting into 240-pin connector sockets. the memory array is designed with 512-mbit double-d ata-rate-two (ddr2) sync hronous drams. all control and address signals are re-driven on the dimm using regi ster devices and a pll for the clock distribution. this reduces capacitive loading to the system bus, but adds one cycle to the sdram timing. decoupling capacitors are mounted on the pcb board. the dimms feature serial presence detect based on a serial e 2 prom device using the 2-pin i 2 c protocol. the first 128 bytes are programmed wit h configuration data and the second 128 bytes are available to the customer. table 3 ordering information for rohs compliant products product type 1) 1) all part numbers end with a place code, de signating the silicon die revision. exam ple: hys72t128300hp?3.7?a, indicating rev. ?a? dies are used for ddr2 sdram components. for a ll infineon ddr2 module and component nomenclature see chapter 6 of this data sheet. compliance code 2) 2) the compliance code is printed on the module label and describes the speed grade, for example ? pc2?4200p?444? 12?r0 ?, where 4200p means very low profil e registered dimm modules with 4. 26 gb/sec module bandwidth and ?444- 12? means column address strobe (cas) latency = 4, row column delay (rcd) latency = 4 and row precharge (rp) latency = 4 using the latest jedec spd revision 1.2 and produced on the raw card ?r? description sdram technology pc2-5300 hys72t64300hp?3s?a 512 mb 1r 8 pc2?5300p?555?12?r0 1 rank, ecc 512 mbit ( 8) hys72t128300hp?3s?a 1 gb 1r 4 pc2?5300p?555?12?u0 1 rank, ecc 512 mbit ( 4) hys72t128320hp?3s?a 1 gb 2r 8 pc2?5300p?555?12?t0 2 ranks, ecc 512 mbit ( 8) pc2-4200 hys72t64300hp?3.7?a 512 mb 1r 8 pc2?4200p?444?12?r0 1 rank, ecc 512 mbit ( 8) hys72t128300hp?3.7?a 1 gb 1r 4 pc2?4200p?444?12?u0 1 rank, ecc 512 mbit ( 4) hys72t128320hp?3.7?a 1 gb 2r 8 pc2?4200p?444?12?t0 2 ranks, ecc 512 mbit ( 8)
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules overview data sheet 8 rev. 1.11, 2005-12 04212005-mf7v-dno1 table 4 address format dimm density module organization memory ranks ecc/ non-ecc # of sdrams # of row/bank/columns bits raw card 512 mb 64m 72 1 ecc 9 14/2/10 r 1 gb 128m 72 1 ecc 18 14/2/10 u 1 gb 128m 72 2 ecc 18 14/2/10 t table 5 components on modules 1) 1) for a detailed description of all available functions of the dram components on these mo dules see the component data sheet. product type 2) 2) green product dram components 2) dram density dram organization hys72t64300hp hyb18t512800af 512 mbit 64m 8 hys72t128300hp hyb18t512400af 512 mbit 128m 4 hys72t128320hp hyb18t512800af 512 mbit 64m 8
data sheet 9 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams 2 pin configuration and block diagrams 2.1 pin configuration the pin configuration of the registered ddr2 sdram dimm is listed by function in table 6 (240 pins). the abbreviations used in columns pin and buffer type are explained in table 7 and table 8 respectively. the pin numbering is depicted in figure 1 . table 6 pin configuration of rdimm with parity pin or ball no. name pin type buffer type function clock signals 185 ck0 i sstl clock signal ck0, complementary clock signal ck0 the system clock inputs. all address and command lines are sampled on the cross point of the rising edge of ck and the falling edge of ck . a delay locked loop (dll) circuit is driven from the clock inputs and output timing for read operations is synchronized to the input clock. 186 ck0 i sstl 52 cke0 i sstl clock enables 1:0 activates the ddr2 sdram ck signal when high and deactivates the ck signal when low. by deactivating the clocks, cke0 initiates the po wer down mode or the self refresh mode. note: 2-ranks module 171 cke1 i sstl nc nc ? not connected note: 1-rank module control signals 193 s0 i sstl chip select rank 1:0 enables the associated ddr2 sdram command decoder when low and disables the command decoder when high. when the command decoder is disabled, new commands are ignored but previous operations continue. rank 0 is selected by s0 ; rank 1 is selected by s1 . the input signals also disable all outputs (except cke and odt) of the register(s) on the dimm when both inputs are high. when s is high, all register outputs (except ck, odt and chip select) remain in the previous state. note: 2-ranks module 76 s1 i sstl nc nc ? not connected note: 1-rank module 192 ras i sstl row address strobe (ras), column address strobe (cas), write enable (we) when sampled at the cross point of the rising edge of ck, and falling edge of ck , ras , cas and we define the operation to be executed by the sdram. 74 cas i sstl 73 we i sstl
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams data sheet 10 rev. 1.11, 2005-12 04212005-mf7v-dno1 18 reset icmos register reset the reset pin is conn ected to the rst pin on the regi ster and to the oe pin on the pll. when low, all register outputs will be driven low and the pll clocks to the drams and the register(s) will be set to lo w-level. the pll will remain synchronized with the input clock. address signals 71 ba0 i sstl bank address bus 1:0 selects internal sdram memory bank 190 ba1 i sstl 54 ba2 i sstl bank address bus 2 greater than 512mb ddr2 sdrams nc i sstl not connected less than 1gb ddr2 sdrams 188 a0 i sstl address bus 12:0, address signal 10/autoprecharge during a bank activate command cycle, defines the row address when sampled at the crosspoint of the rising edge of ck and falling edge of ck . during a read or write command cycle, defines the column addres s when sampled at the cross point of the rising edge of ck and falling edge of ck . in addition to the column address, ap is used to invoke autoprecharge operation at the end of the burst read or write cycle. if ap is high, autoprecharge is selected and ba[ 1 :0] defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle, ap is used in conjunction with ba[ 1 :0] to control which bank(s) to precharge. if ap is high, all banks will be precharged regardless of the state of ba[ 1 :0] inputs. if ap is low, then ba[ 1 :0] are used to define which bank to precharge. 183 a1 i sstl 63 a2 i sstl 182 a3 i sstl 61 a4 i sstl 60 a5 i sstl 180 a6 i sstl 58 a7 i sstl 179 a8 i sstl 177 a9 i sstl 70 a10 i sstl ap i sstl 57 a11 i sstl 176 a12 i sstl 196 a13 i sstl address signal 13 note: modules based on 4, 8 nc nc ? not connected note: modules based on 16 174 a14 i sstl address signal 14 note: 2 gbit based module nc nc ? not connected note: 1 gbit based module or smaller table 6 pin configuration of rdimm (cont?d) with parity pin or ball no. name pin type buffer type function
data sheet 11 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams data signals 3 dq0 i/o sstl data bus 63:0 data input/output pins 4 dq1 i/o sstl 9 dq2 i/o sstl 10 dq3 i/o sstl 122 dq4 i/o sstl 123 dq5 i/o sstl 128 dq6 i/o sstl 129 dq7 i/o sstl 12 dq8 i/o sstl 13 dq9 i/o sstl 21 dq10 i/o sstl 22 dq11 i/o sstl 131 dq12 i/o sstl 132 dq13 i/o sstl 140 dq14 i/o sstl 141 dq15 i/o sstl 24 dq16 i/o sstl 25 dq17 i/o sstl 30 dq18 i/o sstl 31 dq19 i/o sstl 143 dq20 i/o sstl 144 dq21 i/o sstl 149 dq22 i/o sstl 150 dq23 i/o sstl 33 dq24 i/o sstl 34 dq25 i/o sstl 39 dq26 i/o sstl 40 dq27 i/o sstl 152 dq28 i/o sstl 153 dq29 i/o sstl 158 dq30 i/o sstl 159 dq31 i/o sstl 80 dq32 i/o sstl 81 dq33 i/o sstl 86 dq34 i/o sstl 87 dq35 i/o sstl 199 dq36 i/o sstl 200 dq37 i/o sstl 205 dq38 i/o sstl table 6 pin configuration of rdimm (cont?d) with parity pin or ball no. name pin type buffer type function
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams data sheet 12 rev. 1.11, 2005-12 04212005-mf7v-dno1 206 dq39 i/o sstl data bus 63:0 89 dq40 i/o sstl 90 dq41 i/o sstl 95 dq42 i/o sstl 96 dq43 i/o sstl 208 dq44 i/o sstl 209 dq45 i/o sstl 214 dq46 i/o sstl 215 dq47 i/o sstl 98 dq48 i/o sstl 99 dq49 i/o sstl 107 dq50 i/o sstl 108 dq51 i/o sstl 217 dq52 i/o sstl 218 dq53 i/o sstl 226 dq54 i/o sstl 227 dq55 i/o sstl 110 dq56 i/o sstl 111 dq57 i/o sstl 116 dq58 i/o sstl 117 dq59 i/o sstl 229 dq60 i/o sstl 230 dq61 i/o sstl 235 dq62 i/o sstl 236 dq63 i/o sstl check bits 42 cb0 i/o sstl check bits 7:0 check bit input / output pins note: nc on non-ecc module 43 cb1 i/o sstl 48 cb2 i/o sstl 49 cb3 i/o sstl 161 cb4 i/o sstl 162 cb5 i/o sstl 167 cb6 i/o sstl 168 cb7 i/o sstl table 6 pin configuration of rdimm (cont?d) with parity pin or ball no. name pin type buffer type function
data sheet 13 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams data strobe bus 7 dqs0 i/o sstl data strobes 17:0 the data strobes, associated with one data byte, sourced with data transfers. in write mode, the data strobe is sourced by the controller and is centered in the data window. in read mode the data strobe is sourced by the ddr2 sdram and is sent at the leading edge of the data window. dqs signals are complements, and timing is re lative to the crosspoint of respective dqs and dqs. if the module is to be operated in single ended strobe mode, all dq s signals must be tied on the system board to v ss through a 20 ohm to 10 kohm resistor and ddr2 sdram mode registers programmed appropriately. note: see block diagram for corresponding dq signals 6dqs0 i/o sstl 16 dqs1 i/o sstl 15 dqs1 i/o sstl 28 dqs2 i/o sstl 27 dqs2 i/o sstl 37 dqs3 i/o sstl 36 dqs3 i/o sstl 84 dqs4 i/o sstl 83 dqs4 i/o sstl 93 dqs5 i/o sstl 92 dqs5 i/o sstl 105 dqs6 i/o sstl 104 dqs6 i/o sstl 114 dqs7 i/o sstl 113 dqs7 i/o sstl 46 dqs8 i/o sstl 45 dqs8 i/o sstl 126 dqs9 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms 135 dqs10 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms 147 dqs11 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms 156 dqs12 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms 203 dqs13 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms table 6 pin configuration of rdimm (cont?d) with parity pin or ball no. name pin type buffer type function
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams data sheet 14 rev. 1.11, 2005-12 04212005-mf7v-dno1 212 dqs14 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms 224 dqs15 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms 233 dqs16 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms 165 dqs17 i/o sstl not connected note: 8 based dimms only nc nc ? not connected note: 4 based dimms 125 dqs9 i/o sstl data strobes 17:9 note: 4 based module 134 dqs10 i/o sstl 146 dqs11 i/o sstl 155 dqs12 i/o sstl 202 dqs13 i/o sstl 211 dqs14 i/o sstl 223 dqs15 i/o sstl 232 dqs16 i/o sstl 164 dqs17 i/o sstl 125 dm0 i sstl data masks 7:0 the data write masks, associated with one data byte. in write mode, dm operates as a byte mask by allowing input data to be written if it is low but blocks the write operation if it is high. in read mode, dm lines have no effect. note: 8 based module 134 dm1 i sstl 146 dm2 i sstl 155 dm3 i sstl 202 dm4 i sstl 211 dm5 i sstl 223 dm6 i sstl 232 dm7 i sstl 164 dm8 i sstl table 6 pin configuration of rdimm (cont?d) with parity pin or ball no. name pin type buffer type function
data sheet 15 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams eeprom 120 scl i cmos serial bus clock this signal is used to clock data into and out of the spd eeprom. 119 sda i/o od serial bus data this is a bidirectional pin used to transfer data into or out of the spd eeprom. a resistor must be connected from sda to v ddspd on the motherboard to act as a pull-up. 239 sa0 i cmos serial address select bus 2:0 these signals are tied at the system planar to either v ss or v ddspd to configure the serial spd eeprom address range 240 sa1 i cmos 101 sa2 i cmos parity 55 err_out ocmos parity bits note: only for modules with parity bit for address and control bus. not connected on non-parity registered modules. par_in i cmos power supplies 1 v ref ai ? i/o reference voltage reference voltage for the sstl-18 inputs. 238 v ddspd pwr ? eeprom power supply serial eeprom positive power supply, wired to a separated power pin at the connector which supports from 1.7 volt to 3.6 volt. 51, 56, 62, 72, 75, 78, 170, 175,, 181, 191, 194 v ddq pwr ? i/o driver power supply power and ground for the ddr sdram 53, 59, 64, 67, 69, 172, 178, 184,, 187, 189, 197 v dd pwr ? power supply power and ground for the ddr sdram table 6 pin configuration of rdimm (cont?d) with parity pin or ball no. name pin type buffer type function
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams data sheet 16 rev. 1.11, 2005-12 04212005-mf7v-dno1 2, 5, 8, 11, 14, 17, 20, 23, 26, 29, 32, 35, 38, 41, 44, 47, 50, 65, 66, 79, 82, 85, 88, 91, 94, 97, 100, 103, 106, 109, 112, 115, 118, 121, 124, 127, 130, 133, 136, 139, 142, 145, 148, 151, 154, 157, 160, 163, 166, 169, 198, 201, 204, 207, 210, 213, 216, 219, 222, 225, 228, 231, 234, 237 v ss gnd ? ground plane power and ground for the ddr sdram other pins 19, 55, 68, 102, 137, 138, 173, 220, 221 nc nc ? not connected pins not connected on infineon rdimm?s 195 odt0 i sstl on-die termination control 1:0 asserts on-die termination for dq, dm, dqs, and dqs signals if enabled via the ddr2 sdram mode register. note: 2-ranks module 77 odt1 i sstl nc nc ? note: 1-rank modules table 7 abbreviations for buffer type abbreviation description sstl serial stub terminated logic (sstl_18) cmos cmos levels od open drain. the corresponding pin has 2 operational states, active low and tristate, and allows multiple devices to share as a wire-or. table 6 pin configuration of rdimm (cont?d) with parity pin or ball no. name pin type buffer type function
data sheet 17 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams table 8 abbreviations for pin type abbreviation description i standard input-only pin. digital levels. o output. digital levels. i/o i/o is a bidirectional input/output signal. ai input. analog levels. pwr power gnd ground nu not usable nc not connected
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams data sheet 18 rev. 1.11, 2005-12 04212005-mf7v-dno1 figure 1 pin configuration for rd imm with parity (240 pins) 0337 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 95() '4 9 66 '46 '4 9 66 '4 '46 9 66 1& 9 66 '4 '46 9 66 '4 '4 9 66 '46 5(6(7 9 66 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq '4 '4 9 66 '46 '4 9 66 '4 '46 9 66 '4 &% 9 66 '46 &% 9 66 &.( 1&%$ 9 ''4 $ $ 9 ''4 9 '' 9 66 1&3$5b,1 $$3 9 ''4 &$6 1&6 9 ''4 '4 9 66 '46 '4 9 66 '4 '46 9 66 '4 '4 9 66 1& '46 9 66 '4 '4 9 66 '46 '4 9 66 6&/ 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq '4 9 66 '4 '46 9 66 '4 '4 9 66 '46 '4 9 66 &% '46 9 66 &% 9 ''4 9 '' $ 9 '' $ $ 9 66 9 '' 9 '' %$ :( 9 ''4 9 66 '4 '46 9 66 '4 '4 9 66 '46 '4 9 66 '4 6$ 9 66 '46 '4 9 66 '4 '46 9 66 '4 6'$ 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 9 66 '4 '0'46 9 66 '4 '4 9 66 1&'46 1& 9 66 '4 9 66 1&'46 '4 9 66 '4 '0'46 9 66 1& '4 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 9 66 '4 '0'46 9 66 '4 '4 9 66 1&'46 '4 9 66 &% '0'46 9 66 &% 9 ''4 9 '' 1&$ $ 9 '' $ $ 9 '' &. $ %$ 5$6 9 ''4 1&$ 9 66 '4 '0'46 9 66 '4 '4 9 66 1&'46 '4 9 66 '4 1& 9 66 1&'46 '4 9 66 '4 '0'46 9 66 '4 9''63' 6$ 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq 3lq '4 '4 9 66 1&'46 '4 9 66 '4 '0'46 9 66 '4 &% 9 66 1&'46 &% 9 66 1&&.( 1& 9 ''4 $ $ 9 ''4 $ &. 9 '' 9 '' 9 ''4 6 2'7 9 '' '4 9 66 1&'46 '4 9 66 '4 '0'46 9 66 '4 '4 9 66 1& '0'46 9 66 '4 '4 9 66 1&'46 '4 9 66 6$ ) 5 2 1 7 6 , ' ( % $ & . 6 , ' ( 1&(55b287 1&2'7
data sheet 19 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams 2.2 block diagram figure 2 block diagram raw card r rdimm (x72, 1rank, x8) notes 1. unless otherwise noted, resistors are 22 ? 5% 2. s0 connects to dcs and v dd connects to csr on the register. - 0 " 4 $ $ $ $ $ $ $ $ $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 # " # " # " # " # " # " # " # " $ 0 , , / % 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + # + # + 2 % 3 % 4 6 $ $ 3 0 $ % % 0 2 / - % 6 $ $ 6 $ $ 1 3 $ 2 ! - s $ $ 6 2 % & 3 $ 2 ! - s $ $ 6 3 3 3 $ 2 ! - s $ $ 6 $ $ 3 0 $ 6 $ $ 6 $ $ 1 6 2 % & 6 3 3 $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $- $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $- $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $- $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $ - $1 3 $1 3 $ 1 $ 1 $1 $1 $1 $1 $1 $1 $ 1 3 $ 1 3 $ - $1 3 $1 3 $1 $1 $1 $1 $1 $1 $1 $1 # + 3 $ 2 ! - s $ $ # + 3 $ 2 ! - s $ $ # + 2 e g i s t e r # + 2 e g i s t e r 2 3 # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / 3 # , 3 $ ! 3 ! 3 ! 3 ! 6 3 3 % 3 #, 3 $! ! ! ! 7 0 2 % ' ) 3 4 % 2 2 3 2 " ! 2 " ! n 2 ! 2 ! n 2 2 ! 3 2 # ! 3 2 7 % 2 # + % 2 / $ 4 # 3 3 $ 2 ! - s $ $ " ! " ! n 3 $ 2 ! - s $ $ ! ! n 3 $ 2 ! - s $ $ 2 ! 3 3 $ 2 ! - s $ $ # ! 3 3 $ 2 ! - s $ $ 7 % 3 $ 2! - s $ $ # + % 3 $ 2 ! - s $ $ / $4 3 $ 2 ! - s $ $ 3 " ! " ! n ! ! n 2 ! 3 # ! 3 7 % #+ % / $ 4 0 # + 0 # + 2 % 3 % 4 6 3 3 2 e g i s t e r # # 0 ! 2 ? ). 0 0 / 1 % 22 6 3 3 0 ! 2? ) . % r r? / u t + o h m s
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams data sheet 20 rev. 1.11, 2005-12 04212005-mf7v-dno1 figure 3 block diagram raw card t rdimm (x72, 2ranks, x8) notes 1. unless otherwise noted, resistors are 22 ? 5% 2. rs0 and rs1 alternate between the back and front sides of the dimm. - 0 " 4 $ $ $ $ $ $ $ $ $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 # " # " # " # " # " # " # " # " $ $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $ - $1 3 $1 3 $1 $1 $1 $1 $1 $1 $1 $1 $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 3 $ 1 3 $ - $1 3 $1 3 $ 1 $ 1 $1 $1 $1 $1 $1 $1 $ 1 3 $ 1 3 $ - $1 3 $1 3 $1 $1 $1 $1 $1 $1 $1 $1 2 % ' ) 3 4 % 2 2 3 2 3 2 " ! 2 " ! n 2 ! 2 ! n 2 2 ! 3 2 # ! 3 2 7 % 2 # + % 2 # + % 2 / $ 4 2 / $ 4 # 3 3 $ 2 ! - s $ $ # 3 3 $ 2 ! - s $ $ " ! " ! n 3 $ 2 ! - s $ $ ! ! n 3 $ 2 ! - s $ $ 2 ! 3 3 $ 2 ! - s $ $ # ! 3 3 $ 2 ! - s $ $ 7 % 3 $ 2! - s $ $ # + % 3 $ 2! - s $ $ # + % 3 $ 2! - s $ $ / $4 3 $ 2 ! - s $ $ / $4 3 $ 2 ! - s $ $ 3 3 " ! " ! n ! ! n 2 ! 3 # ! 3 7 % #+ % #+ % / $ 4 / $ 4 0 # + 0 # + 2 % 3 % 4 2 3 # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ 1 3 $ 1 3 $ - $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 $ 1 # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $1 3 ) / ) / ) / ) / ) / ) / ) / ) / 3 # , 3 $ ! 3 ! 3 ! 3 ! 6 3 3 % 3 #, 3 $! ! ! ! 7 0 2 3 0 , , / % 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + # + # + 2 % 3 % 4 # + 3 $ 2 ! - s $ $ # + 3 $ 2 ! - s $ $ # + 2 e g i s t e r # + 2 e g i s t e r 6 $ $ 3 0 $ % % 0 2 / - % 6 $ $ 6 $ $ 1 3 $ 2 ! - s $ $ 6 2 % & 3 $ 2 ! - s $ $ 6 3 3 3 $ 2 ! - s $ $ 6 $ $ 3 0 $ 6 $ $ 6 $ $ 1 6 2 % & 6 3 3 # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $1 3 ) / ) / ) / ) / ) / ) / ) / ) / # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ # 3 $ 1 3 $ 1 3 $ - 2 $ 1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ # 3 $ 1 3 $ 1 3 $ - 2 $1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ # 3 $ 1 3 $ 1 3 $ - 2 $1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ # 3 $ 1 3 $ 1 3 $ - 2 $1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ # 3 $ 1 3 $ 1 3 $ - 2 $1 3 . 5 2 $ 1 3 ) / ) / ) / ) / ) / ) / ) / ) / $ 6 3 3 2 e g i s t e r ! # # 0 ! 2 ? ) . 0 0 / 1 % 2 2 6 $ $ 0 ! 2 ? ) . 6 $ $ 2 e g i s t e r " # # 0 ! 2 ? ) . 0 0 / 1 % 2 2 6 $ $ % r r ? / u t
data sheet 21 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules pin configuration and block diagrams figure 4 block diagram raw card u rdimm (x72, 1rank, x4) notes 1. unless otherwise noted, resistors are 22 ? 5% 2. s0 connects to dcs of register1 and csr of register2. 3. csr of register1 and dcs of register2 connects to v dd . 4. reset , pck7 and pck7 connect to both registers. - 0 " 4 $ $ $ $ $ $ $ $ $ 1 3 $ 1 3 # " # " # " # " 6 3 3 $ 0 , , / % 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + 0 # + # + # + 2 % 3 % 4 $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 $ 1 3 $ 1 3 $ 1 $ 1 $1 $1 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 # + 3 $ 2 ! - s $ $ # + 3 $ 2 ! - s $ $ # + 2 e g i s t e r # + 2 e g i s t e r 2 3 $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 6 3 3 3 # , 3 $ ! 3 ! 3 ! 3 ! 6 3 3 % 3 #, 3 $! ! ! ! 7 0 2 % ' ) 3 4 % 2 2 3 2 " ! 2 " ! n 2 ! 2 ! n 2 2 ! 3 2 # ! 3 2 7 % 2 # + % 2 / $ 4 # 3 3 $ 2 ! - s $ $ " ! " ! n 3 $ 2 ! - s $ $ ! ! n 3 $ 2 ! - s $ $ 2 ! 3 3 $ 2 ! - s $ $ # ! 3 3 $ 2 ! - s $ $ 7 % 3 $ 2! - s $ $ # + % 3 $ 2 ! - s $ $ / $4 3 $ 2 ! - s $ $ 3 " ! " ! n ! ! n 2 ! 3 # ! 3 7 % #+ % / $ 4 0 # + 0 # + 2 % 3 % 4 # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - $ 1 3 $ 1 3 # " # " # " # " 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 $ 1 3 $ 1 3 $1 $1 $1 $1 6 3 3 $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 6 3 3 $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 6 3 3 $ 1 3 $ 1 3 $ 1 $ 1 $ 1 $ 1 6 3 3 # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - $ $ $ # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - # 3 $ 1 3 $ 1 3 ) / ) / ) / ) / $ - $ $ $ $ $ $ 6 $ $ 3 0 $ % % 0 2 / - % 6 $ $ 6 $ $ 1 3 $ 2 ! - s $ $ 6 2 % & 3 $ 2 ! - s $ $ 6 3 3 3 $ 2 ! - s $ $ 6 $ $ 3 0 $ 6 $ $ 6 $ $ 1 6 2 % & 6 3 3 6 3 3 2 e g i s t e r ! # # 0 ! 2 ? ) . 0 0 / 1 % 2 2 6 $ $ 0 ! 2? ) . 6 $ $ 2 e g i s t e r " # # 0 ! 2 ? ) . 0 0 / 1 % 2 2 6 $ $ % r r ? / u t
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics data sheet 22 rev. 1.11, 2005-12 04212005-mf7v-dno1 3 electrical characteristics 3.1 absolute maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values maycause irreversible damage to the integrated circuit. 3.2 dc operating conditions table 9 absolute maximum ratings parameter symbol values unit note/test condition min. max. voltage on any pins relative to v ss v in , v out ?0.5 2.3 v voltage on v dd relative to v ss v dd ?1.0 2.3 v voltage on v ddq relative to v ss v ddq ?0.5 2.3 v storage humidity (without condensation) h stg 595% table 10 operating conditions parameter symbol values unit notes min. max. dimm module operating temperature range (ambient) t opr 0+55 c dram component case temperature range t case 0+95 c 1)2)3)4) 1) dram component case temperature is the surface temperat ure in the center on the to p side of any of the drams. 2) within the dram component case temperature range all dram specificat ion will be supported. 3) above 85 c dram case temperature the auto-refresh command interval has to be reduced to t refi = 3.9 s. 4) self-refresh period is hard-coded in the drams and therefore it is imperative that the syst em ensures the dram is below 85 c case temperature before init iating self-refresh operation. storage temperature t stg ?50 +100 c barometric pressure (operating & storage) pbar +69 +105 kpa 5) 5) up to 3000 m operating humidity (relative) h opr 10 90 %
data sheet 23 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics table 11 supply voltage levels and dc operating conditions parameter symbol values unit notes min. nom. max. device supply voltage v dd 1.7 1.8 1.9 v output supply voltage v ddq 1.7 1.8 1.9 v 1) 1) under all conditions, v ddq must be less than or equal to v dd input reference voltage v ref 0.49 x v ddq 0.5 x v ddq 0.51 x v ddq v 2) 2) peak to peak ac noise on v ref may not exceed 2% v ref (dc). v ref is also expected to track noise variations in v ddq . spd supply voltage v ddspd 1.7 ? 3.6 v dc input logic high v ih (dc) v ref + 0.125 ? v ddq +0.3 v dc input logic low v il (dc) ?0.30 ? v ref ? 0.125 v in / output leakage current i l ?5 5 a 3) 3) input voltage for any connec tor pin under test of 0 v v in v ddq + 0.3 v; all other pins at 0 v. current is per pin
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics data sheet 24 rev. 1.11, 2005-12 04212005-mf7v-dno1 3.3 ac characteristics 3.3.1 speed grades definitions table 12 speed grade definition speed bins for ddr2?667 speed grade ddr2?667 unit notes ifx sort name ?3s cas-rcd-rp latencies 5?5?5 t ck parameter symbol min. max. ? clock frequency @ cl = 3 t ck 58ns 1)2)3)4) 1) timings are guaranteed with ck/ck differential slew rate of 2.0 v/ns. for dqs signals timings are guaranteed with a differential slew rate of 2.0 v/ns in differential strobe mode and a slew rate of 1 v/ns in single ended mode. timings are further guaranteed for normal ocd drive strength (emrs(1) a1 = 0) . 2) the ck/ck input reference level (for timing reference to ck/ck ) is the point at which ck and ck cross. the dqs/dqs , rdqs/rdqs , input reference level is the crosspoint when in differential strobe mode 3) inputs are not recognized as valid until v ref stabilizes. during the period before v ref stabilizes, cke = 0.2 x v ddq is recognized as low. 4) the output timing reference voltage level is v tt . @ cl = 4 t ck 3.75 8 ns 1)2)3)4) @ cl = 5 t ck 38ns 1)2)3)4) row active time t ras 45 70000 ns 1)2)3)4)5) 5) t ras.max is calculated from the maximum amount of time a ddr2 device can operate without a refresh command which is equal to 9 x t refi . row cycle time t rc 60 ? ns 1)2)3)4) ras-cas-delay t rcd 15 ? ns 1)2)3)4) row precharge time t rp 15 ? ns 1)2)3)4) table 13 speed grade definition speed bins for ddr2-533 speed grade ddr2?533c unit note ifx sort name ?3.7 cas-rcd-rp latencies 4?4?4 t ck parameter symbol min. max. ? clock frequency @ cl = 3 t ck 58ns 1)2)3)4) 1) timings are guaranteed with ck/ck differential slew rate of 2.0 v/ns. for dqs signals timings are guaranteed with a differential slew rate of 2.0 v/ns in di fferential strobe mode and a slew rate of 1 v/ns in single ended mode. timings are further guaranteed for normal ocd drive strength (emrs(1) a1 = 0) only. 2) the ck/ck input reference level (for timing reference to ck/ck ) is the point at which ck and ck cross. the dqs / dqs , rdqs / rdqs , input reference level is the cross point when in differential strobe mode @ cl = 4 t ck 3.75 8 ns 1)2)3)4) @ cl = 5 t ck 3.75 8 ns 1)2)3)4) row active time t ras 45 70000 ns 1)2)3)4)5) row cycle time t rc 60 ? ns 1)2)3)4) ras-cas-delay t rcd 15 ? ns 1)2)3)4) row precharge time t rp 15 ? ns 1)2)3)4)
data sheet 25 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics 3.3.2 ac timing parameters 3) inputs are not recognized as valid until v ref stabilizes. during the period before v ref stabilizes, cke = 0.2 x v ddq is recognized as low. 4) the output timing reference voltage level is v tt . 5) t ras.max is calculated from the maximum amount of time a ddr2 device can operate without a refresh command which is equal to 9 x t refi . table 14 timing parameter by speed grade - ddr2-667 parameter symbol ddr2-667 unit note 1)2)3)4)5)6) 7) min. max. dq output access time from ck / ck t ac ?450 +450 ps cas a to cas b command period t ccd 2? t ck ck, ck high-level width t ch 0.45 0.55 t ck cke minimum high and low pulse width t cke 3? t ck ck, ck low-level width t cl 0.45 0.55 t ck auto-precharge write recovery + precharge time t dal wr + t rp ? t ck minimum time clocks remain on after cke asynchronously drops low t delay t is + t ck + t ih ?? ns dq and dm input hold time (differential data strobe) t dh (base) 175 ?? ps dq and dm input pulse width (each input) t dipw 0.35 ? t ck dqs output access time from ck / ck t dqsck ?400 + 400 ps dqs input low (high) pulse width (write cycle) t dqsl,h 0.35 ? t ck dqs-dq skew (for dqs & associated dq signals) t dqsq 240 ? ps write command to 1st dqs latching transition t dqss ? 0.25 + 0.25 t ck dq and dm input setup time (differential data strobe) t ds (base) 100 ? ps dqs falling edge hold time from ck (write cycle) t dsh 0.2 ? t ck dqs falling edge to ck setup time (write cycle) t dss 0.2 ? t ck clock half period t hp min. ( t cl, t ch ) data-out high-impedance time from ck / ck t hz ? t ac.max ps address and control input hold time t ih (base) 275 ? ps address and control input pulse width (each input) t ipw 0.6 ? t ck address and control input setup time t is (base) 200 ? ps dq low-impedance time from ck / ck t lz(dq) 2 x t ac.min t ac.max ps dqs low-impedance from ck / ck t lz(dqs) t ac.min t ac.max ps mode register set command cycle time t mrd 2? t ck ocd drive mode output delay t oit 012ns data output hold time from dqs t qh t hp ? t qhs ? data hold skew factor t qhs 340 ? ps average periodic refresh interval t refi ?7.8 s 8) ?3.9 s 9) auto-refresh to active/auto-refresh command period t rfc 105 ? ns
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics data sheet 26 rev. 1.11, 2005-12 04212005-mf7v-dno1 read preamble t rpre 0.9 1.1 t ck read postamble t rpst 0.40 0.60 t ck active bank a to active bank b command period t rrd 7.5 ? ns 10) 10 ? ns 11) internal read to precharge command delay t rtp 7.5 ? ns write preamble t wpre 0.35 ? t ck write postamble t wpst 0.40 0.60 t ck write recovery time for write without auto-precharge t wr 15 ? ns write recovery time for write with auto-precharge wr t wr / t ck t ck internal write to read command delay t wtr 7.5 ? ns exit power down to any valid command (other than nop or deselect) t xard 2? t ck exit active power-down mode to read command (slow exit, lower power) t xards 7 ? al ? t ck exit precharge power-down to any valid command (other than nop or deselect) t xp 2? t ck exit self-refresh to non-read command t xsnr t rfc +10 ? ns exit self-refresh to read command t xsrd 200 ? t ck 1) for details and notes see the relevant infineon component data sheet 2) v ddq = 1.8 v 0.1 v; v dd = 1.8 v 0.1 v. see notes 4)5)6)7) 3) timing that is not specified is illegal and after such an ev ent, in order to guarantee pro per operation, the dram must be powered down and then restarted through the specified init ialization sequence before normal operation can continue. 4) timings are guaranteed with ck/ck differential slew rate of 2.0 v/ns. for dqs signals timings are guaranteed with a differential slew rate of 2.0 v/ns in differential stro be mode and a slew rate of 1 v/ns in single ended mode. 5) the ck/ck input reference level (for timing reference to ck/ck ) is the point at which ck and ck cross. the dqs/dqs , rdqs/rdqs , input reference level is the crossp oint when in differential strobe mode 6) inputs are not recognized as valid until v ref stabilizes. during the period before v ref stabilizes, cke = 0.2 x v ddq is recognized as low. 7) the output timing reference voltage level is v tt . 8) 0 t case 85 c 9) 85 c < t case 95 c 10) x4 & x8 11) x16 table 15 timing parameter by speed grade - ddr2-533 parameter symbol ddr2?533 unit note 1)2)3)4)5)6)7) min. max. dq output access time from ck/ck t ac ?500 +500 ps cas a to cas b command period t ccd 2? t ck ck,ck high-level width t ch 0.45 0.55 t ck cke minimum high and low pulse width t cke 3? t ck ck,ck low-level width t cl 0.45 0.55 t ck table 14 timing parameter by speed grade - ddr2-667 parameter symbol ddr2-667 unit note 1)2)3)4)5)6) 7) min. max.
data sheet 27 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics auto-precharge wr ite recovery + precharge time t dal wr + t rp ? t ck minimum time clocks remain on after cke asynchronously drops low t delay t is + t ck + t ih ?? ns dq and dm input hold time (differential data strobe) t dh (base) 225 ?? ps dq and dm input hold time (single ended data strobe) t dh1 (base) ?25 ? ps dq and dm input pulse width (each input) t dipw 0.35 ? t ck dqs output access time from ck/ck t dqsck ?450 + 450 ps dqs input low (high) pulse width (write cycle) t dqsl,h 0.35 ? t ck dqs-dq skew (for dqs & associated dq signals) t dqsq ? 300 ps write command to 1st dqs latching transition t dqss wl ? 0.25 wl + 0.25 t ck dq and dm input setu p time (differential data strobe) t ds (base) 100 ? ps dq and dm input setup time (single ended data strobe) t ds1 (base) ?25 ? ps dqs falling edge hold time from ck (write cycle) t dsh 0.2 ? t ck dqs falling edge to ck setup time (write cycle) t dss 0.2 ? t ck clock half period t hp min. ( t cl, t ch ) data-out high-impedance time from ck/ck t hz ? t ac.max ps address and control input hold time t ih (base) 375 ? ps address and control input pulse width (each input) t ipw 0.6 ? t ck address and control input setup time t is (base) 250 ? ps dq low-impedance time from ck / ck t lz(dq) 2 x t ac.min t ac.max ps dqs low-impedance from ck / ck t lz(dqs) t ac.min t ac.max ps mode register set command to odt update delay t mod 012ns mode register set command cycle time t mrd 2? t ck ocd drive mode output delay t oit 012ns data output hold time from dqs t qh t hp ? t qhs ? data hold skew factor t qhs ? 400 ps average periodic refresh interval t refi ?7.8 s 8) ?3.9 s 9) table 15 timing parameter by speed grade - ddr2-533 (cont?d) parameter symbol ddr2?533 unit note 1)2)3)4)5)6)7) min. max.
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics data sheet 28 rev. 1.11, 2005-12 04212005-mf7v-dno1 auto-refresh to ac tive/auto-refresh command period t rfc 105 ? ns read preamble t rpre 0.9 1.1 t ck read postamble t rpst 0.40 0.60 t ck active bank a to active bank b command period t rrd 7.5 ? ns 10) internal read to precharge command delay t rtp 7.5 ? ns write preamble t wpre 0.35 x t ck ? t ck write postamble t wpst 0.40 0.60 t ck write recovery time for write without auto- precharge t wr 15 ? ns write recovery time for write with auto- precharge wr t wr / t ck t ck internal write to read command delay t wtr 7.5 ? ns exit power down to any valid command (other than nop or deselect) t xard 2? t ck exit active power-down mode to read command (slow exit, lower power) t xards 6 ? al ? t ck exit precharge power-down to any valid command (other than nop or deselect) t xp 2? t ck exit self-refresh to non-read command t xsnr t rfc +10 ? ns exit self-refresh to read command t xsrd 200 ? t ck 1) for details and notes see the relevant infineon component data sheet 2) v ddq = 1.8v 0.1v; v dd = 1.8 v 0.1 v. see notes 4)5)6)7) 3) timing that is not specified is illegal and after such an ev ent, in order to guarantee pro per operation, the dram must be powered down and then restarted through the specified init ialization sequence before normal operation can continue. 4) timings are guaranteed with ck/ck differential slew rate of 2.0 v/ns. for dqs signals timings are guaranteed with a differential slew rate of 2.0 v/ns in differential stro be mode and a slew rate of 1 v/ns in single ended mode. 5) the ck/ck input reference level (for timing reference to ck/ck ) is the point at which ck and ck cross. the dqs/dqs , rdqs/rdqs , input reference level is the crossp oint when in differential strobe mode 6) inputs are not recognized as valid until v ref stabilizes. during the period before v ref stabilizes, cke = 0.2 x v ddq is recognized as low. 7) the output timing reference voltage level is v tt . 8) 0 t case 85 c 9) 85 c < t case 95 c 10) x4 & x8 table 15 timing parameter by speed grade - ddr2-533 (cont?d) parameter symbol ddr2?533 unit note 1)2)3)4)5)6)7) min. max.
data sheet 29 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics 3.3.3 odt ac electri cal characteristics table 16 odt ac electrical characteristics and operating conditions for ddr2-667 symbol parameter / condition values unit note min. max. t aond odt turn-on delay 2 2 t ck t aon odt turn-on t ac.min t ac.max +0.7ns ns 1) 1) odt turn on time min. is when the device leaves high impedance and odt resistance begins to turn on. odt turn on time max is when the odt resistance is fully on. both are measure from t aond . t aonpd odt turn-on (power-down modes) t ac.min + 2 ns 2 t ck + t ac.max +1 ns ns t aofd odt turn-off delay 2.5 2.5 t ck t aof odt turn-off t ac.min t ac.max +0.6ns ns 2) 2) odt turn off time min. is when the device starts to turn off odt resistance. odt turn off time max is when the bus is in high impedance. both are measured from t aofd . t aofpd odt turn-off (power-down modes) t ac.min + 2 ns 2.5 t ck + t ac.max + 1 ns ns t anpd odt to power down mo de entry latency 3 ? t ck t axpd odt power down exit latency 8 ? t ck table 17 odt ac electrical characteristics and operating conditions for ddr2-533 symbol parameter / condition values unit note min. max. t aond odt turn-on delay 2 2 t ck t aon odt turn-on t ac.min t ac.max + 1 ns ns 1) 1) odt turn on time min. is when the device leaves high impedance and odt resistance begins to turn on. odt turn on time max is when the odt resistance is fully on. both are measure from t aond . t aonpd odt turn-on (power-down modes) t ac.min + 2 ns 2 t ck + t ac.max + 1 ns ns t aofd odt turn-off delay 2.5 2.5 t ck t aof odt turn-off t ac.min t ac.max + 0.6 ns ns 2) 2) odt turn off time min. is when the device starts to turn off odt resistance. odt turn off time max is when the bus is in high impedance. both are measured from t aofd . t aofpd odt turn-off (power-down modes) t ac.min + 2 ns 2.5 t ck + t ac.max + 1 ns ns t anpd odt to power down mo de entry latency 3 ? t ck t axpd odt power down exit latency 8 ? t ck
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics data sheet 30 rev. 1.11, 2005-12 04212005-mf7v-dno1 3.4 currents specifications and conditions table 18 i dd measurement conditions 1)2)3)4)5)6)7)8) parameter symbol operating current 0 one bank active - precharge; t ck = t ck.min , t rc = t rc.min , t ras = t ras.min , cke is high, cs is high between valid commands. address and control inputs are switching, databus inputs are switching. i dd0 operating current 1 one bank active - read - precharge; i out = 0 ma, bl = 4, t ck = t ck.min , t rc = t rc.min , t ras = t ras.min , t rcd = t rcd.min , al = 0, cl = cl .min ; cke is high, cs is high between valid commands. address and control inputs are switching, databus inputs are switching. i dd1 precharge standby current all banks idle; cs is high; cke is high; t ck = t ck.min ; other control and address inputs are switching, data bus in puts are switching i dd2n precharge power-down current other control and address inputs are stable, data bus in puts are floating . i dd2p precharge quiet standby current all banks idle; cs is high; cke is high; t ck = t ck.min ; other control and address inputs are stable, data bus inputs are floating. i dd2q active power-down current all banks open; t ck = t ck.min , cke is low; other control and address inputs are stable, data bus inputs are floating. mrs a12 bit is set to low (fast power-down exit); i dd3p(0) active power-down current all banks open; t ck = t ck.min , cke is low; other control and address inputs are stable, data bus inputs are floating. mrs a12 bit is set to high (slow power-down exit); i dd3p(1) active standby current burst read: all banks open; continuous burst reads; bl = 4; al = 0, cl = cl min ; t ck = t ck.min ; t ras = t ras.max , t rp = t rp.min ; cke is high, cs is high between valid commands. address inputs are switching; data bus inputs are switching; i out = 0 ma. i dd3n operating current burst read: all banks open; continuous burst reads; bl = 4; al = 0, cl = cl min ; t ck = t ck.min ; t ras = t ras.max. , t rp = t rp.min ; cke is high, cs is high between valid commands. address inputs are switching; data bus inputs are switching; i out = 0 ma. i dd4r operating current burst write: all banks open; continuous burst writes; bl = 4; al = 0, cl = cl min ; t ck = t ck.min ; t ras = t ras.max. , t rp = t rp.max ; cke is high, cs is high between valid commands. address inputs are switching; data bus inputs are switching; i dd4w burst refresh current t ck = t ck.min ., refresh command every t rfc = t rfc.min interval, cke is high, cs is high between valid commands, other control and address inputs ar e switching, data bus inputs are switching. i dd5b distributed refresh current t ck = t ck.min , refresh command every t rfc = t refi interval, cke is low and cs is high between valid commands, other control and address inputs ar e switching, data bus inputs are switching. i dd5d
data sheet 31 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics self-refresh current cke 0.2 v; external clock off, ck and ck at 0 v; other control and address inputs are floating, data bus inputs are fl oating. reset is low. i dd6 current values are guaranteed up to t case of 85 c max. i dd6 all bank interleave read current all banks are being interleaved at minimum t rc without violating t rrd using a burst length of 4. control and address bus inputs are stable during deselects. i out = 0 ma. i dd7 1) v ddq = 1.8 v 0.1 v; v dd = 1.8 v 0.1 v 2) idd specifications are tested after the device is properly initialized and idd pa rameter are specified with odt disabled. 3) definitions for i dd see table 19 4) i dd1 , i dd4r and i dd7 current measurements are defined with the outputs disabled ( i out = 0 ma). to achieve this on module level the output buffers can be disabl ed using an emrs(1) (extended mode register command) by setting a12 bit to high. 5) for two rank modules: for all active current measur ements the other rank is in precharge power-down mode i dd2p 6) reset signal is high fo r all currents, except for i dd6 (self refresh) 7) all current measurements includes register and pll current consumption 8) for details and notes see the relevant infineon component data sheet table 19 definitions for i dd parameter description low v in v il(ac).max , high is defined as v in v ih(ac).min stable inputs are stable at a high or low level floating inputs are v ref = v ddq /2 switching inputs are changing between high and low every other clock (once per 2 cycles) for address and control signals, and inputs changing between high and low every othe r data transfer (once per cycle) for dq signals no t including mask or strobes. table 18 i dd measurement conditions (cont?d) 1)2)3)4)5)6)7)8) parameter symbol
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics data sheet 32 rev. 1.11, 2005-12 04212005-mf7v-dno1 table 20 i dd specification for hys72t[64/128]3x0hp?3s?a product type hys72t64300hp?3s?a hys72t128300hp?3s?a hys72t128320hp?3s?a unit notes 1) 1) module i dd is calculated on the basis of component i dd and currents includes register s and pll. odt disabled. i dd1 , i dd4r and i dd7 are defined with the outputs disabled. organization 512mb 1gb 1gb 1rank 1rank 2ranks 72 72 72 ?3s ?3s ?3s symbol max. max. max. i dd0 1020 1870 1070 ma 2) 2) the other rank is in i dd2p precharge power-down standby current mode i dd1 1150 2130 1200 ma 2) i dd2n 840 1500 1290 ma 3) 3) both ranks are in the same i dd mode i dd2p 430 690 480 ma 3) i dd2q 750 1320 1110 ma 3) i dd3n 840 1500 1290 ma 3) i dd3p( mrs = 0) 560 940 730 ma 3) i dd3p( mrs = 1) 440 700 490 ma 3) i dd4r 1560 2940 1600 ma 2) i dd4w 1650 3120 1690 ma 2) i dd5b 1650 3120 1690 ma 2) i dd5d 440 700 490 ma 3)4) 4) values for 0 c t case 85 c i dd6 45 90 90 ma 3)4) i dd7 1710 3240 1750 ma 2)
data sheet 33 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics table 21 i dd specification for hys72t[64/128]3x0hp?3.7?a product type hys72t64300hp?3.7?a hys72t128300hp?3.7?a hys72t128320hp?3.7?a unit notes 1) 1) module i dd is calculated on the basis of component i dd and currents includes register s and pll. odt disabled. i dd1 , i dd4r and i dd7 are defined with the outputs disabled. organization 512mb 1gb 1gb 1rank 1rank 2ranks 72 72 72 ?3.7 ?3.7 ?3.7 symbol max. max. max. i dd0 920 1670 960 ma 2) 2) the other rank is in i dd2p precharge power-down standby current mode i dd1 1010 1850 1050 ma 2) i dd2n 690 1220 1050 ma 3) 3) both ranks are in the same i dd mode i dd2p 370 580 410 ma 3) i dd2q 600 1040 870 ma 3) i dd3n 690 1220 1050 ma 3) i dd3p( mrs = 0) 470 790 620 ma 3) i dd3p( mrs = 1) 380 590 420 ma 3) i dd4r 1140 2120 1180 ma 2) i dd4w 1190 2210 1230 ma 2) i dd5b 1500 2840 1540 ma 2) i dd5d 380 610 440 ma 3)4) 4) values for 0 c t case 85 c i dd6 41 81 81 ma 3)4) i dd7 1640 3110 1680 ma 2)
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics data sheet 34 rev. 1.11, 2005-12 04212005-mf7v-dno1 3.4.1 i dd test conditions for testing the i dd parameters, the following timing parameters are used: table 22 i dd measurement test conditions for ddr2?667 parameter symbol ?3s unit ddr2?667d cas latency cl (idd) 5 t ck clock cycle time t ck(idd) 3.75 ns active to read or write delay t rcd(idd) 15 ns active to active / auto -refresh command period t rc(idd) 60 ns active bank a to active bank b command delay 8 1) 1) 4 & 8 (1 kb page size) t rrd(idd) 7.5 ns 16 2) 2) 16 (2 kb page size), not on 256m components t rrd(idd) 10 ns active to precharge command t ras.min(idd) 45 ns t ras.max(idd) 70000 ns precharge command period t rp(idd) 15 ns auto-refresh to active / auto-refresh command period t rfc(idd) 105 ns average periodic refresh interval t refi 7.8 s table 23 i dd measurement test conditions for ddr2?533 parameter symbol ?3.7 unit ddr2?533c cas latency c l (idd) 4 t ck clock cycle time t ck(idd) 3.75 ns active to read or write delay t rcd(idd) 15 ns active to active / auto -refresh command period t rc(idd) 60 ns active bank a to active bank b command delay 8 1) 1) 4 & 8 (1 kb page size) t rrd(idd) 7.5 ns 16 2) 2) 16 (2 kb page size), not on 256m components t rrd(idd) 10 ns active to precharge command t ras.min(idd) 45 ns t ras.max(idd) 70000 ns precharge command period t rp(idd) 15 ns auto-refresh to active / auto-refresh command period t rfc(idd) 105 ns average periodic refresh interval t refi 7.8 s
data sheet 35 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules electrical characteristics 3.4.2 on die termina tion (odt) current the odt function adds addi tional current consumption to the ddr2 sdram when enabled by the emrs(1). depending on address bits a[6,2] in the emrs(1) a ?weak? or ?strong? termination can be selected. the current consumption for any terminated input pin, depends on the input pin is in tri-state or driving 0 or 1, as long a odt is enabled during a given period of time. table 24 odt current per terminated pin parameter symbol min. typ. m ax. unit emrs(1) state enabled odt current per dq odt is high; data bus inputs are floating i odto 5 6 7.5 ma/dq a6 = 0, a2 = 1 2.5 3 3.75 ma/dq a6 = 1, a2 = 0 7.5 9 11.25 ma/dq a6 = 1, a2 = 1 active odt current per dq odt is high; worst case of data bus inputs are stable or switching. i odtt 10 12 15 ma/dq a6 = 0, a2 = 1 5 6 7.5 ma/dq a6 = 1, a2 = 0 15 18 22.5 ma/dq a6 = 1, a2 = 0
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules spd codes data sheet 36 rev. 1.11, 2005-12 04212005-mf7v-dno1 4spdcodes this chapter lists all hexadecimal byte values stored in the eeprom of the products described in this data sheet. spd stands for serial presence detect . all values with xx in the table are module specific byte s which are defined during production. list of spd code tables ? table 25 ?spd codes for pc2?5300p?555? on page 36 ? table 26 ?spd codes for pc2?4200p?444? on page 40 table 25 spd codes for pc2?5300p?555 product type hys72t64300hp?3s?a hys72t128300hp?3s?a hys72t128320hp?3s?a organization 512 mb 1 gbyte 1 gbyte 72 72 72 1 rank ( 8) 1 rank ( 4) 2 ranks ( 8) label code pc2?5300p?555 pc2?5300p?555 pc2?5300p?555 jedec spd revision rev. 1.2 rev. 1.2 rev. 1.2 byte# description hex hex hex 0 programmed spd bytes in eeprom 80 80 80 1 total number of bytes in eeprom 08 08 08 2 memory type (ddr2) 08 08 08 3 number of row addresses 0e 0e 0e 4 number of column addresses 0a 0b 0a 5 dimm rank and stacking information 00 00 01 6 data width 48 48 48 7 not used 00 00 00 8 interface voltage level 05 05 05 9 t ck @ cl max (byte 18) [ns] 30 30 30 10 t ac sdram @ cl max (byte 18) [ns] 45 45 45 11 error correction support (non-ecc, ecc) 06 06 06 12 refresh rate and type 82 82 82 13 primary sdram width 08 04 08 14 error checking sdram width 08 04 08 15 not used 00 00 00 16 burst length supported 0c 0c 0c 17 number of banks on sdram device 04 04 04 18 supported cas latencies 38 38 38
data sheet 37 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules spd codes 19 dimm mechanical characteristics 01 01 01 20 dimm type information 01 01 01 21 dimm attributes 04 05 05 22 component attributes 03 03 03 23 t ck @ cl max -1 (byte 18) [ns] 3d 3d 3d 24 t ac sdram @ cl max -1 [ns] 50 50 50 25 t ck @ cl max -2 (byte 18) [ns] 50 50 50 26 t ac sdram @ cl max -2 [ns] 60 60 60 27 t rp.min [ns] 3c 3c 3c 28 t rrd.min [ns] 1e 1e 1e 29 t rcd.min [ns] 3c 3c 3c 30 t ras.min [ns] 2d 2d 2d 31 module density per rank 80 01 80 32 t as.min and t cs.min [ns] 20 20 20 33 t ah.min and t ch.min [ns] 27 27 27 34 t ds.min [ns] 10 10 10 35 t dh.min [ns] 17 17 17 36 t wr.min [ns] 3c 3c 3c 37 t wtr.min [ns] 1e 1e 1e 38 t rtp.min [ns] 1e 1e 1e 39 analysis characteristics 00 00 00 40 t rc and t rfc extension 000000 41 t rc.min [ns] 3c 3c 3c 42 t rfc.min [ns] 69 69 69 43 t ck.max [ns] 80 80 80 44 t dqsq.max [ns] 18 18 18 45 t qhs.max [ns] 22 22 22 46 pll relock time 0f 0f 0f table 25 spd codes for pc2?5300p?555 (cont?d) product type hys72t64300hp?3s?a hys72t128300hp?3s?a hys72t128320hp?3s?a organization 512 mb 1 gbyte 1 gbyte 72 72 72 1 rank ( 8) 1 rank ( 4) 2 ranks ( 8) label code pc2?5300p?555 pc2?5300p?555 pc2?5300p?555 jedec spd revision rev. 1.2 rev. 1.2 rev. 1.2 byte# description hex hex hex
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules spd codes data sheet 38 rev. 1.11, 2005-12 04212005-mf7v-dno1 47 t case.max delta / ? t 4r4w delta 53 53 53 48 psi(t-a) dram 78 78 78 49 ? t 0 (dt0) 4b4b4b 50 ? t 2n (dt2n, udimm) or ? t 2q (dt2q, rdimm) 2e 2e 2e 51 ? t 2p (dt2p) 26 26 26 52 ? t 3n (dt3n) 26 26 26 53 ? t 3p.fast (dt3p fast) 2b2b2b 54 ? t 3p.slow (dt3p slow) 1b1b1b 55 ? t 4r (dt4r) / ? t 4r4w sign (dt4r4w) 4a 4a 4a 56 ? t 5b (dt5b) 20 20 20 57 ? t 7 (dt7) 222222 58 psi(ca) pll c4 c4 c4 59psi(ca) reg 8c8c8c 60 ? t pll (dtpll) 686868 61 ? t reg (dtreg) / toggle rate 94 94 94 62 spd revision 12 12 12 63 checksum of bytes 0-62 e7 62 e9 64 jedec id code of infineon (1) c1 c1 c1 65 jedec id code of infineon (2) 00 00 00 66 jedec id code of infineon (3) 00 00 00 67 jedec id code of infineon (4) 00 00 00 68 jedec id code of infineon (5) 00 00 00 69 jedec id code of infineon (6) 00 00 00 70 jedec id code of infineon (7) 00 00 00 71 jedec id code of infineon (8) 00 00 00 72 module manufacturer location xx xx xx 73 product type, char 1 37 37 37 table 25 spd codes for pc2?5300p?555 (cont?d) product type hys72t64300hp?3s?a hys72t128300hp?3s?a hys72t128320hp?3s?a organization 512 mb 1 gbyte 1 gbyte 72 72 72 1 rank ( 8) 1 rank ( 4) 2 ranks ( 8) label code pc2?5300p?555 pc2?5300p?555 pc2?5300p?555 jedec spd revision rev. 1.2 rev. 1.2 rev. 1.2 byte# description hex hex hex
data sheet 39 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules spd codes 74 product type, char 2 32 32 32 75 product type, char 3 54 54 54 76 product type, char 4 36 31 31 77 product type, char 5 34 32 32 78 product type, char 6 33 38 38 79 product type, char 7 30 33 33 80 product type, char 8 30 30 32 81 product type, char 9 48 30 30 82 product type, char 10 50 48 48 83 product type, char 11 33 50 50 84 product type, char 12 53 33 33 85 product type, char 13 41 53 53 86 product type, char 14 20 41 41 87 product type, char 15 20 20 20 88 product type, char 16 20 20 20 89 product type, char 17 20 20 20 90 product type, char 18 20 20 20 91 module revision code 0x 0x 0x 92 test program revision code xx xx xx 93 module manufacturing date year xx xx xx 94 module manufacturing date week xx xx xx 95 - 98 module serial number xx xx xx 99 - 255 not used ff ff ff table 25 spd codes for pc2?5300p?555 (cont?d) product type hys72t64300hp?3s?a hys72t128300hp?3s?a hys72t128320hp?3s?a organization 512 mb 1 gbyte 1 gbyte 72 72 72 1 rank ( 8) 1 rank ( 4) 2 ranks ( 8) label code pc2?5300p?555 pc2?5300p?555 pc2?5300p?555 jedec spd revision rev. 1.2 rev. 1.2 rev. 1.2 byte# description hex hex hex
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules spd codes data sheet 40 rev. 1.11, 2005-12 04212005-mf7v-dno1 table 26 spd codes for pc2?4200p?444 product type hys72t64300hp?3.7?a hys72t128300hp?3.7?a hys72t128320hp?3.7?a organization 512 mb 1 gbyte 1 gbyte 72 72 72 1 rank ( 8) 1 rank ( 4) 2 ranks ( 8) label code pc2?4200p?444 pc2?4200p?444 pc2?4200p?444 jedec spd revision rev. 1.2 rev. 1.2 rev. 1.2 byte# description hex hex hex 0 programmed spd bytes in eeprom 80 80 80 1 total number of bytes in eeprom 08 08 08 2 memory type (ddr2) 08 08 08 3 number of row addresses 0e 0e 0e 4 number of column addresses 0a 0b 0a 5 dimm rank and stacking information 00 00 01 6 data width 48 48 48 7 not used 00 00 00 8 interface voltage level 05 05 05 9 t ck @ cl max (byte 18) [ns] 3d 3d 3d 10 t ac sdram @ cl max (byte 18) [ns] 50 50 50 11 error correction support (non-ecc, ecc) 06 06 06 12 refresh rate and type 82 82 82 13 primary sdram width 08 04 08 14 error checking sdram width 08 04 08 15 not used 00 00 00 16 burst length supported 0c 0c 0c 17 number of banks on sdram device 04 04 04 18 supported cas latencies 38 38 38 19 dimm mechanical characteristics 01 01 01 20 dimm type information 01 01 01 21 dimm attributes 04 05 05 22 component attributes 03 03 03 23 t ck @ cl max -1 (byte 18) [ns] 3d 3d 3d 24 t ac sdram @ cl max -1 [ns] 50 50 50 25 t ck @ cl max -2 (byte 18) [ns] 50 50 50 26 t ac sdram @ cl max -2 [ns] 60 60 60
data sheet 41 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules spd codes 27 t rp.min [ns] 3c 3c 3c 28 t rrd.min [ns] 1e 1e 1e 29 t rcd.min [ns] 3c 3c 3c 30 t ras.min [ns] 2d 2d 2d 31 module density per rank 80 01 80 32 t as.min and t cs.min [ns] 25 25 25 33 t ah.min and t ch.min [ns] 37 37 37 34 t ds.min [ns] 10 10 10 35 t dh.min [ns] 22 22 22 36 t wr.min [ns] 3c 3c 3c 37 t wtr.min [ns] 1e 1e 1e 38 t rtp.min [ns] 1e 1e 1e 39 analysis characteristics 00 00 00 40 t rc and t rfc extension 000000 41 t rc.min [ns] 3c 3c 3c 42 t rfc.min [ns] 69 69 69 43 t ck.max [ns] 80 80 80 44 t dqsq.max [ns] 1e 1e 1e 45 t qhs.max [ns] 28 28 28 46 pll relock time 0f 0f 0f 47 t case.max delta / ? t 4r4w delta 51 51 51 48 psi(t-a) dram 78 78 78 49 ? t 0 (dt0) 3f3f3f 50 ? t 2n (dt2n, udimm) or ? t 2q (dt2q, rdimm) 22 22 22 51 ? t 2p (dt2p) 1e 1e 1e 52 ? t 3n (dt3n) 1e 1e 1e 53 ? t 3p.fast (dt3p fast) 242424 table 26 spd codes for pc2?4200p?444 (cont?d) product type hys72t64300hp?3.7?a hys72t128300hp?3.7?a hys72t128320hp?3.7?a organization 512 mb 1 gbyte 1 gbyte 72 72 72 1 rank ( 8) 1 rank ( 4) 2 ranks ( 8) label code pc2?4200p?444 pc2?4200p?444 pc2?4200p?444 jedec spd revision rev. 1.2 rev. 1.2 rev. 1.2 byte# description hex hex hex
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules spd codes data sheet 42 rev. 1.11, 2005-12 04212005-mf7v-dno1 54 ? t 3p.slow (dt3p slow) 171717 55 ? t 4r (dt4r) / ? t 4r4w sign (dt4r4w) 34 34 34 56 ? t 5b (dt5b) 1e 1e 1e 57 ? t 7 (dt7) 202020 58 psi(ca) pll c4 c4 c4 59psi(ca) reg 8c8c8c 60 ? t pll (dtpll) 616161 61 ? t reg (dtreg) / toggle rate 78 78 78 62 spd revision 12 12 12 63 checksum of bytes 0-62 b9 34 bb 64 jedec id code of infineon (1) c1 c1 c1 65 jedec id code of infineon (2) 00 00 00 66 jedec id code of infineon (3) 00 00 00 67 jedec id code of infineon (4) 00 00 00 68 jedec id code of infineon (5) 00 00 00 69 jedec id code of infineon (6) 00 00 00 70 jedec id code of infineon (7) 00 00 00 71 jedec id code of infineon (8) 00 00 00 72 module manufacturer location xx xx xx 73 product type, char 1 37 37 37 74 product type, char 2 32 32 32 75 product type, char 3 54 54 54 76 product type, char 4 36 31 31 77 product type, char 5 34 32 32 78 product type, char 6 33 38 38 79 product type, char 7 30 33 33 80 product type, char 8 30 30 32 81 product type, char 9 48 30 30 table 26 spd codes for pc2?4200p?444 (cont?d) product type hys72t64300hp?3.7?a hys72t128300hp?3.7?a hys72t128320hp?3.7?a organization 512 mb 1 gbyte 1 gbyte 72 72 72 1 rank ( 8) 1 rank ( 4) 2 ranks ( 8) label code pc2?4200p?444 pc2?4200p?444 pc2?4200p?444 jedec spd revision rev. 1.2 rev. 1.2 rev. 1.2 byte# description hex hex hex
data sheet 43 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules spd codes 82 product type, char 10 50 48 48 83 product type, char 11 33 50 50 84 product type, char 12 2e 33 33 85 product type, char 13 37 2e 2e 86 product type, char 14 41 37 37 87 product type, char 15 20 41 41 88 product type, char 16 20 20 20 89 product type, char 17 20 20 20 90 product type, char 18 20 20 20 91 module revision code 0x 0x 0x 92 test program revision code xx xx xx 93 module manufacturing date year xx xx xx 94 module manufacturing date week xx xx xx 95 - 98 module serial number xx xx xx 99 - 255 not used ff ff ff table 26 spd codes for pc2?4200p?444 (cont?d) product type hys72t64300hp?3.7?a hys72t128300hp?3.7?a hys72t128320hp?3.7?a organization 512 mb 1 gbyte 1 gbyte 72 72 72 1 rank ( 8) 1 rank ( 4) 2 ranks ( 8) label code pc2?4200p?444 pc2?4200p?444 pc2?4200p?444 jedec spd revision rev. 1.2 rev. 1.2 rev. 1.2 byte# description hex hex hex
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules package outlines data sheet 44 rev. 1.11, 2005-12 04212005-mf7v-dno1 5 package outlines figure 5 package outline raw card r l-dim-240-51
data sheet 45 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules package outlines figure 6 package outline raw card t l-dim-240-52 ' 0 , # " ! ? - ! 8 # ? $ e t a i l o f c o n t a c t s # ? ! " ? x ? ! " ? - ) . ? 2
hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules package outlines data sheet 46 rev. 1.11, 2005-12 04212005-mf7v-dno1 figure 7 package outline raw card u - l-dim-240-53 ' , $ # " ! ? - ! 8 # ? ? ! ? - ) . $ e t a i l o f c o n t a c t s # ? ! " ? " x
data sheet 47 rev. 1.11, 2005-12 04212005-mf7v-dno1 hys72t[64/128]3x0hp?[3s/3.7]?a registered ddr2 sdram modules product type nomenclature (ddr2 drams and dimms) 6 product type nomenclature (ddr2 drams and dimms) infineon?s nomenclature uses simple coding combined with some propriatory coding. table 27 provides examples for module and component product type number as well as the field number. the detailed field description together with possible values and coding explanation is listed for modules in table 28 and for components in table 29 . table 27 nomenclature fields and examples example for field number 1234567891011 micro-dimm hys72t64300hp?3.7?a ddr2 dram hyb 18 t 512 80 0 a f ?3.7 table 28 ddr2 dimm nomenclature field description values coding 1infineon modul prefix hys constant 2 module data width [bit] 64 non-ecc 72 ecc 3dram technology t ddr2 4 memory density per i/o [mbit]; module density 1) 32 256 mbyte 64 512 mbyte 128 1 gbyte 256 2 gbyte 512 4 gbyte 5raw card generation 0 .. 9 look up table 6 number of module ranks 0, 2, 4 1, 2, 4 7 product variations 0 .. 9 look up table 8 package, lead-free status a .. z look up table 9 module type d so- d imm m m icro-dimm r r egistered u u nbuffered 10 speed grade ?2.5 pc2?6400 6?6?6 ?3 pc2?5300 4?4?4 ?3s pc2?5300 5?5?5 ?3.7 pc2?4200 4?4?4 ?5 pc2?3200 3?3?3 11 die revision ?a first ?b second 1) multiplying ?memory density per i/o? with ?module data width? and dividing by 8 for non-ecc and 9 for ecc modules gives the overall module memory density in mbytes as listed in column ?coding?. table 29 ddr2 dram nomenclature field description values coding 1 infineon component prefix hyb constant 2 interface voltage [v] 18 sstl1.8 3dram technology t ddr2 4 component density [mbit] 256 256 mbit 512 512 mbit 1g 1 gbit 2g 2 gbit 5+6 number of i/os 40 4 80 8 16 16 7 product variations 0 .. 9 look up table 8 die revision a first b second 9 package, lead-free status cfbga, lead-containing f fbga, lead-free 10 speed grade ?2.5 ddr2-800 6-6-6 ?3 ddr2-667 4-4-4 ?3s ddr2-667 5-5-5 ?3.7 ddr2-533 4-4-4 ?5 ddr2-400 3-3-3
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